PTF080101M Datasheet, PDF (1/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

PTF080101M
High Power RF LDMOS Field Effect Transistor
10 W, 450 – 960 MHz
Description
The PTF080101M is an unmatched 10-watt GOLDMOS^® FET intended for
class AB base station applications in the 450 MHz to 960 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 180 mA, ƒ = 960 MHz
21
20
19 _Gain
18
17
16
Ef f iciency
15
14
20
25
30
35
40
Output Power (dBm)
70
60
50
40
30
20
10
0
45
PTF080101M
Package PG-RFP-10
Features
• Typical EDGE performance
- Average output power = 5.0 W
- Gain = 19 dB
- Efficiency = 37%
- EVM = 2.0%
• Typical CW performance
- Output Power at P–1dB = 12.5 W
- Gain = 18 dB
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
16
—
η_D
35
—
IMD
—
—
Max
—
—
–28
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2009-02-18