PTF080101M Datasheet, PDF (4/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

PTF080101M
Typical Performance (cont.)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.05
0.28
0.51
0.74
0.97
1.2
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
820
840
860
880
900
920
940
960
980
1000
Z Source Ω
R
jX
3.73
2.10
3.81
2.22
3.83
2.30
3.76
2.39
3.61
2.50
3.37
2.69
3.08
2.96
2.76
3.35
2.43
3.86
2.13
4.47
Z Load Ω
R
jX
10.41
3.92
9.61
4.14
9.00
4.48
8.55
4.89
8.24
5.32
8.02
5.76
7.89
6.20
7.84
6.63
7.85
7.04
7.91
7.43
Data Sheet
4 of 8
Rev. 02.1, 2009-02-18