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PTF080101M Datasheet, PDF (6/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz
PTF080101M
Reference Circuit (cont.)
R5
C4
C5
C6 R6
QQ1
R4 C3 C1
VDD
R3
R2
LM
C2
R1
R7
Q1
C11
R8
C10
RF_IN
C8
C7
C9
VDD
C12 C13
C15
C14
RF_OUT
C16
080101M_C_02
080101m_assy
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3
C4
C5
C6, C8, C10, C11,
C15
C7
C9
C12
C13
C14
C16
Q1
QQ1
R1
R2
R3
R4
R5, R8
R6, R7
Description
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 36 pF
Ceramic capacitor, 5.1 pF
Ceramic capacitor, 10 pF
Tantalum capacitor, 10 µF, 50 V
Capacitor, 1.0 µF
Ceramic capacitor, 4.5 pF
Ceramic capacitor, 3.1 pF
Transistor
Voltage regulator
Chip Resistor 1.2 k-ohms
Chip Resistor 1.3 k-ohms
Chip Resistor 1 k-ohms
Potentiometer 2 k-ohms
Chip Resistor 10 ohms
Chip Resistor 5.1 k-ohms
Suggested Manufacturer
Digi-Key
Digi-Key
Digi-Key
ATC
P/N or Comment
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
100B 360
ATC
ATC
Garrett Electronics
Toshiba
ATC
ATC
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
100B 5R1
100B 100
TPS106K050R0400
C4532XTRZA105M
100B 4R5
100B 3R1
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P1KECT-ND
3224W-202ETR-ND
P10ECT-ND
P5.1KECT-ND
*Gerber Files for this circuit available on request
Data Sheet
6 of 8
Rev. 02.1, 2009-02-18