PTF080101M Datasheet, PDF (5/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

PTF080101M
Reference Circuit
C1
0.001µF
R2
R1
1.3K V 1.2K V
QQ1
Q1
LM7805
BCP56
VDD
C2
0.001µF
C03. _001µF
R1K3 _V
R4
2K V
RF_IN
R105_V
1C04µF
35V
R6
5. 1KV
l9
1R08V
C0.51µF
R7
5.1K V
3C66pF
l8
l2
l1
l3
C8
36p F
l4
l5
C7
5. 1p F
DUT
l6
l7
C9
10p F
C11
C12
C13
VDD
36pF 10µF 1µF
l15
50V
C10
36pF
l14
C15
36pF
l10 l11
l12
l13
l16
C14
4. 5p F
l17
C16
3. 1p F
RF_OUT
Reference circuit schematic for ƒ = 960 MHz
Circuit Assembly Information
DUT
PTF080101M
PCB
0.76 mm [.030"] thick, ε_r = 4.5
Microstrip
Electrical Characteristics at 960 MHz¹
l1
0.016 λ, 50.0Ω
l2
0.132 λ, 75.0 Ω
l3
0.028 λ, 50.0 Ω
l4
0.101 λ, 50.0 Ω
l5
0.015 λ, 10.0 Ω
l6
0.086 λ, 10.0 Ω
l7
0.050 λ, 10.0 Ω
l8
0.106 λ, 73.0 Ω
l9
0.086 λ, 73.0 Ω
l10
0.020 λ, 29.0 Ω
l11
0.061 λ, 12.5 Ω
l12
0.111 λ, 12.5 Ω
l13
0.022 λ, 12.5 Ω
l14
0.028 λ, 73.0 Ω
l15
0.100 λ, 73.0 Ω
l16
0.070 λ, 50.0 Ω
l17
0.016 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
LDMOS Transistor
Rogers TMM4
Dimensions: L x W (mm)
2.77 x 1.27
25.65 x 0.64
4.83 x 1.27
17.20 x 1.27
2.39 x 11.99
13.08 x 11.99
7.65 x 11.99
18.49 x 0.64
15.16 x 0.64
3.30 x 3.30
9.42 x 9.19
17.53 x 9.19
3.35 x 9.19
4.90 x 0.64
17.53 x 0.64
11.94 x 1.22
2.67 x 1.22
Data Sheet
5 of 8
2 oz. copper
Dimensions: L x W (in.)
0.109 x 0.050
1.010 x 0.025
0.190 x 0.050
0.677 x 0.050
0.094 x 0.472
0.515 x 0.472
0.301 x 0.472
0.728 x 0.025
0.597 x 0.025
0.130 x 0.130
0.371 x 0.362
0.690 x 0.362
0.132 x 0.362
0.193 x 0.025
0.690 x 0.025
0.470 x 0.048
0.105 x 0.048
Rev. 02.1, 2009-02-18