PTAB182002TC Datasheet, PDF (7/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002TC
Package Outline Specifications
Package H-49248H-4 (formed leads)
2X 45° x .64
[.025]
(8.89
[.350])
(5.08
[.200])
D1
D2
CL
9.78
[.385]
CL
4X 1.49±0.25
[.059±.010]
4X 1.00+–00..1205
[ ] ^{.039+–..000140}
14.75±0.50
[.581±.020]
4X R0.51+–00..3183
[ ] ^R.020
+.015
–.005
G1
G2
CL
4X 3.81
[.150]
2X 12.70
[.500]
4X 5° TYP.
4X 0.13±0.08
[.005±.003] SPH
3.76±0.25
[.148±.010]
19.81±0.20
[.780±.008]
(1.02
[.040])
h-49248h -4_g w_r 01_06-02-2014
20.57
[.810]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [0.005].
4. Pins: D1 - peak side drain; G1 - peak side gate; D2 - main side drain,
G2 - main side gate; S - source (flange).
5. Lead thickness: 0.10 +0.051/–0.025 [0.004+0.002/–0.001].
6. Gold plating thickness:
flange – 0.25 micron [10 microinch] max;
leads – 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
(http://www.infineon.com/rfpower)
Data Sheet
7 of 8
Rev. 04, 2014-07-01