PTAB182002TC Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002TC
DC Characteristics
Characteristic (each side)
Drain-source Breakdown Voltage
Drain Leakage Current
OGna-testaLteeaRkaegseisCtaunrcren(tmain)
On-state Resistance (mpeaaink)
Onp-esrtaattinegRGesaitsetaVnoclteag(pee(amka) in)
Operating Gate Voltage (pmeaaink)
GOapteeraLteinagkaGgaeteCVuorrlteangte (peak)
Conditions
Symbol
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
V_DS = 28 V, V_GS = 0 V
I_DSS
V_DS = 63 V, V_GS = 0 V
I_DSS
V_GS = 102 V, V_DS = 0.V1 V
RI_DGSS(Son)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
V_GDS = 2180 V, VI_DDQS==502.10 VmA R_DV_SG(Son)
V_DS = 28 V, I_DQ = 052m0AmA
V_GS
V_GDS = 2180 V, VI_DDQS==00mVA
IV_GGSSS
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 170 W CW)
Symbol
V_DSS
V_GS
T_J
T_STG
R_qJC
Min
Typ
Max Unit
65
—
—
V
—
—
1.0
µA
—
—
10.0
µA
—
0—.15
1—.0
µΩA
—
0.0195
—
Ω
2—.5
03..009
3—.5
ΩV
02.75
13.10
13.5
V
0—.7
1—.1
1.50
µVA
Value
65
–6 to +10
200
–40 to +150
0.34
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package and Description
PTAB182002TC V2 R250 PTAB182002TCV2R250XTMA1 H-49248H-4, ceramic open-cavity, formed leads, earless
Shipping
Tape & Reel, 250 pcs
Pinout Diagram (top view)
Peak
G1
D1
Main
G2
D2
h-x x248- hgf- 4_D_pd-a_3- 28-13
S (flange)
Lead connections for PTAB182002TC
Pin
D1
D2
G1
G2
S (flange)
Description
Peak Device Drain
Main Device Drain
Peak Device Gate
Main Device Gate
Source
Data Sheet
2 of 8
Rev. 04, 2014-07-01