PTAB182002TC Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002TC
Typical Performance (data taken in a production Doherty test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 500 mA, V_GS = 1.2 V,
ƒ = 1805 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
60
-15
50
-25
40
-35
30
-45
IMD Low
20
IMD Up
ACPR
-55
Efficiency
10
-65
32
36
40
44
Output Power (dBm)
48
b182002tc gr7
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 500 mA, V_GS = 1.2 V,
ƒ = 1842 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
60
-15
50
-25
40
-35
30
-45
IMD Low
20
IMD Up
ACPR
-55
Efficiency
10
-65
32
36
40
44
Output Power (dBm)
48
b182002tc gr8
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 500 mA, V_GS = 1.2 V,
ƒ = 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-5
60
-15
50
-25
40
-35
30
-45
IMD Low
20
IMD Up
ACPR
-55
Efficiency
10
-65
32
36
40
44
Output Power (dBm)
48
b182002tc gr9
0
52
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 500 mA, V_GS = 1.2 V,
ƒ = 1805, 1842, 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
-10
1805 MHz
1842 MHz
1880 MHz
-20
-30
-40
32
IMD Up
IMD Low
36
40
44
48
Output Power (dBm)
b182002tc gr10
52
Data Sheet
3 of 8
Rev. 04, 2014-07-01