PTAB182002TC Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002TC
Typical Performance (cont.)
Small Signal CW
Gain & Input Return Loss (single side)
V_DD = 28 V, I_DQ = 500 mA
25
0
20
-5
Gain
15
-10
10
-15
5
IRL
0
-20
-5
1550
1650
1750
1850
1950
b182002tc gr15
-25
2050 2150
Frequency (MHz)
Load Pull Performance
Z Source
G
G
Z Load
D
S
D
Main Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 530 mA
Max Output Power
P_1dB
Max PAE
Freq
Z Source
Z Load
Gain
P_OUT
P_OUT
PAE
Z Load
Gain
P_OUT
P_OUT
PAE
[MHz]
[Ω]
[Ω]
[dB] [dBm]
[W]
[%]
[Ω]
[dB]
[dBm]
[W]
[%]
1805
5.6 – j6.1 2.3 – j9.4 16.4 49.89
97
54.4 6.6 – j9.5 18.9
48.16
65
65.0
1842 12.4 – j12.7 2.1 – j9.4 15.9 50.03
101
53.6 5.4 – j8.6 18.7
48.21
66
66.0
1880 15.1 – j14.5 2.1 – j9.8 16.2 50.06
101
54.7 5.0 – j9.0 18.8
48.34
68
68.0
Peak Side Load Pull Performance – Pulsed CW signal: 16 µsec, 10% duty cycle; 28 V, 850 mA
Max Output Power
P_1dB
Max PAE
Freq
Z Source
Z Load
Gain
P_OUT
P_OUT
PAE
Z Load
Gain
P_OUT
P_OUT
PAE
[MHz]
[Ω]
[Ω]
[dB] [dBm]
[W]
[%]
[Ω]
[dB]
[dBm]
[W]
[%]
1805
7.5 – j8.9 1.5 – j9.3 18.2 51.47
140
52.8 2.4 – j8.3 20.1
50.17
104
62.5
1842
6.7 – j5.2 1.2 – j9.2 18.2 51.68
147
53.1 2.4 – j8.3 20.3
50.09
102
62.9
1880
5.5 – j6.8 1.4 – j9.7 18.7 51.35
136
54.0 2.4 – j8.3 20.5
49.95
99
62.2
Data Sheet
5 of 8
Rev. 04, 2014-07-01