PTAB182002TC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTAB182002TC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PTAB182002TC is a 180-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 1805
to 1880 MHz frequency band. Features include input and output
matching, high gain and a thermally-enhanced package with ear-
less copper flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTAB182002TC
Package H-49248H-4
(formed leads)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 500 mA, V_GS = 1.2 V,
ƒ = 1805, 1842, 1880 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz bandwidth
30
60
1805 MHz
25
1842 MHz
1880 MHz
20
50
Efficiency
40
15
30
Gain
10
20
5
10
0
32
36
40
44
48
Output Power (dBm)
b182002t c gr6
0
52
Features
• Asymmetric Doherty design
- Main: P_1dB = 70 W Typ
- Peak: P_1dB = 120 W Typ
• Broadband internal matching
• Integrated ESD protection
• Capable of handling 3:1 VSWR @ 30 V, 50 W
(average) output power (one-carrier WCDMA
signal, 10 dB PAR, Doherty test fixture)
• Copper flange for enhanced thermal performance
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier Specifications (device with flat leads tested in an Infineon Doherty production test fixture)
V_DD = 28 V, V_GSPK = (V_GS at I_DQ = 900 mA)–1.90 V, I_DQ = 520 mA, P_OUT = 29 W avg., ƒ₁ = 1870 MHz, ƒ₂ = 1880 MHz. 3GPP WCDMA
signal: 3.84 MHz bandwidth, 7.5 dB PAR @ 0.01% CCDF.
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
η_D
IMD
Min
Typ
Max
Unit
14.0
14.8
—
dB
44
47
—
%
—
–27.6 –24.0
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 04, 2014-07-01