PTAB182002TC Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

Typical Performance (cont.)
CW Performance
V_DD = 28 V, I_DQ = 500 mA,
ƒ = 1805, 1842, 1880 MHz,
25
20
Gain
15
Efficiency
10
5
35
1805 MHz
1842 MHz
1880 MHz
40
45
50
Output Power (dBm)
60
50
40
30
b182002tc gr11
20
55
CW Performance
at selected V_DD
I_DQ = 500 mA, ƒ = 1842 MHz
25
60
Efficiency
20
50
15
Gain
10
5
0
35
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
40
45
50
Output Power (dBm)
40
30
20
b182002tc gr13
10
55
PTAB182002TC
CW Performance
at selected V_DD
I_DQ = 500 mA, ƒ = 1805 MHz
25
60
Efficiency
20
50
15
Gain
10
5
0
35
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
40
45
50
Output Power (dBm)
40
30
20
b182002tc gr12
10
55
CW Performance
at selected V_DD
I_DQ = 500 mA, ƒ = 1880 MHz
25
60
Efficiency
20
50
15
Gain
10
5
V_DD = 24 V
V_DD = 28 V
V_DD = 32 V
0
35
40
45
50
Output Power (dBm)
40
30
20
b182002tc gr14
10
55
Data Sheet
4 of 8
Rev. 04, 2014-07-01