IKW50N65H5A Datasheet, PDF (7/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Tvj=150°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
-
85
- ns
- 1.03 - µC
- 20.6 - A
- -362 - A/µs
-
46
- ns
- 0.49 - µC
- 18.0 - A
- -830 - A/µs
7
Rev.2.1,2015-01-15