IKW50N65H5A Datasheet, PDF (11/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
1.0
Eoff
0.9
Eon
Ets
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.1
Eoff
1.0
Eon
Ets
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 13. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
0.0
200 250 300 350 400 450 500
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 14. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamic
test circuit in Figure E)
16
VCC=130V
VCC=520V
14
1E+4
Cies
Coes
Cres
12
1000
10
8
100
6
4
10
2
0
0
20
40
60
80
100 120
QG,GATECHARGE[nC]
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge
(IC=50A)
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
Rev.2.1,2015-01-15