IKW50N65H5A Datasheet, PDF (12/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
1
1
D = 0.5
D = 0.5
0.2
0.2
0.1
0.1
0.1
0.05
0.1
0.05
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
0.001
1E-6
i:
1
2
3
4
ri[K/W]: 0.115657 0.129838 0.156524 0.147981
τi[s]: 1.8E-4 1.7E-3 0.0144 0.127484
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-7
1E-6
i:
1
2
3
4
ri[K/W]: 0.2723102 0.3217888 0.4470437 0.4588573
τi[s]: 1.3E-4
1.1E-3
0.0104944 0.1086427
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 18. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
120
Tvj=25°C,IF=25A
Tvj=150°C,IF=25A
110
100
1.2
Tvj=25°C,IF=25A
Tvj=150°C,IF=25A
1.0
90
0.8
80
0.6
70
60
0.4
50
40
500 700 900 1100 1300 1500 1700
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 19. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
0.2
500 700 900 1100 1300 1500 1700
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
12
Rev.2.1,2015-01-15