IKW50N65H5A Datasheet, PDF (6/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tvj=25°C,
-
20
- ns
tr
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
td(off)
RG(on)=12.0Ω,RG(off)=12.0Ω,
-
4
- ns
- 187 - ns
tf
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
-
24
- ns
Eon
Energy losses include “tail” and
- 0.10 - mJ
Eoff
diode reverse recovery.
- 0.04 - mJ
Ets
- 0.14 - mJ
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=25°C,
VR=400V,
IF=25.0A,
diF/dt=1200A/µs
Tvj=25°C,
VR=400V,
IF=6.0A,
diF/dt=1200A/µs
-
58
- ns
- 0.57 - µC
- 16.7 - A
- -459 - A/µs
-
31
- ns
- 0.26 - µC
- 13.0 - A
- -1380 - A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=150°C,
VCC=400V,IC=6.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=12.0Ω,
Lσ=30nH,Cσ=30pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Value
Unit
min. typ. max.
-
20
- ns
-
13
- ns
- 200 - ns
-
13
- ns
- 0.61 - mJ
- 0.24 - mJ
- 0.85 - mJ
-
18
- ns
-
4
- ns
- 225 - ns
-
31
- ns
- 0.16 - mJ
- 0.07 - mJ
- 0.23 - mJ
6
Rev.2.1,2015-01-15