IKW50N65H5A Datasheet, PDF (10/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
5.5
typ.
min.
5.0
max.
4.5
100
4.0
3.5
3.0
10
2.5
2.0
1.5
1
25
50
75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=25A,RG(on)=12Ω,RG(off)=12Ω,dynamictest
circuit in Figure E)
1.0
25
50
75
100
125
150
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
10
Eoff
9
Eon
Ets
8
7
6
2.4
Eoff
Eon
2.1
Ets
1.8
1.5
5
1.2
4
0.9
3
0.6
2
0.3
1
0
0.0
0
30
60
90
120
150
5 15 25 35 45 55 65 75 85
IC,COLLECTORCURRENT[A]
RG,GATERESISTANCE[Ω]
Figure 11. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,
dynamic test circuit in Figure E)
Figure 12. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=25A,dynamictestcircuitin
Figure E)
10
Rev.2.1,2015-01-15