IKW50N65H5A Datasheet, PDF (2/16 Pages) Infineon Technologies AG – High speed switching series fifth generation

IKW50N65H5A
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOP^TM5technologycopackedwith
RAPID1fastandsoftantiparalleldiode

FeaturesandBenefits:
C
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoAEC-Q101
•Greenpackage(RoHScompliant)
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Batterycharger
•DC/DCconverter
Packagepindefinition:
1
2
3
•Pin1-gate
•Pin2&backside-collector
•Pin3-emitter
KeyPerformanceandPackageParameters
Type
VCE
IC
VCEsat,Tvj=25°C
IKW50N65H5A
650V 50A
1.66V
Tvjmax
175°C
Marking
K50EH5A
Package
PG-TO247-3
2
Rev.2.1,2015-01-15