BFR843EL3 Datasheet, PDF (7/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3
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Product Brief
Product Brief
The BFR843EL3 is a low noise broadband NPN bipolar RF transistor. Its integrated feedback provides a
broadband pre-match to 50 Ω at input and output and improves the stability against parasitic oscillations. These
measures simplify the design of arbitrary LNA application circuits. The device is based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to V_CEO = 2.25 V and currents up to I_C = 55 mA. The device is especially suited for mobile applications
in which low power consumption is a key requirement. The transistor is fitted with internal protection circuits, which
enhance the robustness against electrostatic discharge (ESD) and against high levels of RF input power. The
device is housed in a very small thin leadless plastic package, ideal for modules.
Data Sheet
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Revision 1.0, 2014-08-05