BFR843EL3 Datasheet, PDF (15/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3
Electrical Characteristics
Table 5-10 AC Characteristics, V_CE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
14.5 –
10.5 –
1.35 –
10.5 –
1.5 –
17
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
15
Revision 1.0, 2014-08-05