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BFR843EL3 Datasheet, PDF (13/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor
BFR843EL3
Electrical Characteristics
Table 5-4 AC Characteristics, VCE = 1.8 V, f = 900 MHz (cont’d)
Parameter
Symbol
Values
Min. Typ. Max.
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
NFmin
–
Gass
–
OP1dB
–
OIP3 –
0.95 –
22
–
7
–
21.5 –
Unit Note / Test Condition
dB
dBm
IC = 8 mA
IC = 8 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Table 5-5 AC Characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gms
–
|S21|2
–
NFmin
–
Gass
–
OP1dB
–
OIP3 –
24.5 –
23
–
0.95 –
21.5 –
7
–
21.5 –
Unit Note / Test Condition
dB
dB
dBm
IC = 15 mA
IC = 15 mA
IC = 8 mA
IC = 8 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Table 5-6 AC Characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
Gms
–
|S21|2
–
NFmin
–
Gass
–
OP1dB
–
OIP3 –
24.5 –
22.5 –
1
–
21
–
7
–
21
–
Unit Note / Test Condition
dB
dB
dBm
IC = 15 mA
IC = 15 mA
IC = 8 mA
IC = 8 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Data Sheet
13
Revision 1.0, 2014-08-05