BFR843EL3 Datasheet, PDF (5/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFR843EL3 Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 6-1 Collector Current vs. Collector Emitter Voltage I_C = f (V_CE), I_B = Parameter . . . . . . . . . . . . . . . . . 16
Figure 6-2 DC Current Gain h_FE = f (I_C), V_CE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 6-3 Collector Current vs. Base Emitter Forward Voltage I_C = f (V_BE), V_CE = 1.8 V . . . . . . . . . . . . . . . . 17
Figure 6-4 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 6-5 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 1.8 V . . . . . . . . . . . . . . . . . . . 18
Figure 7-1 3rd Order Intercept Point at Output OIP3 = f (I_C), Z_S = Z_L = 50 Ω, V_CE, f = Parameters . . . . . . . . 19
Figure 7-2 3rd Order Intercept Point at Output OIP3 [dBm] =f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . 19
Figure 7-3 Compression Point at Output OP_1dB [dBm] = f (I_C, V_CE), Z_S = Z_L = 50 Ω, f = 5.5 GHz . . . . . . . . . . 20
Figure 7-4 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 1.8 V, I_C = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 7-5 Maximum Power Gain G_max = f (I_C), V_CE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 21
Figure 7-6 Maximum Power Gain G_max = f (V_CE), I_C = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 21
Figure 7-7 Input Reflection Coefficient S₁₁ = f (f), V_CE = 1.8 V, I_C = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7-8 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 1.8 V, I_C = 8 / 15 mA . . . . . . . . . 22
Figure 7-9 Output Reflection Coefficient S₂₂ = f (f), V_CE = 1.8 V, I_C = 8 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-10 Noise Figure NF_min = f (f), V_CE = 1.8 V, I_C = 8 / 15 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 7-11 Noise Figure NF_min = f (I_C), V_CE = 1.8 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 7-12 Noise Figure NF₅₀ = f (I_C), V_CE = 1.8 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 9-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9-3 Marking Description (Marking BFR843EL3: T2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 9-4 Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Data Sheet
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Revision 1.0, 2014-08-05