BFR843EL3 Datasheet, PDF (14/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3
Electrical Characteristics
Table 5-7 AC Characteristics, V_CE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
24
–
22
–
1
–
20
–
6
–
20.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-8 AC Characteristics, V_CE = 1.8 V, f = 3.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
23
–
19.5 –
1.05 –
18.5 –
6
–
20.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-9 AC Characteristics, V_CE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
21.5 –
16.5 –
1.15 –
15.5 –
4.5 –
20.5 –
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
14
Revision 1.0, 2014-08-05