BFR843EL3 Datasheet, PDF (12/27 Pages) Infineon Technologies AG – Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BFR843EL3
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Electrical Characteristics
VB
Bias-T
In
3
GND
1 _{RF- RF-} 2
In Out
VC
Bias -T
Out
Figure 5-1 BFR843EL3 Testing Circuit
Table 5-3 AC Characteristics, V_CE = 1.8 V, f = 450 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
Minimum Noise Figure
Minimum noise figure
Associated gain
Linearity
1 dB compression point at output
3rd order intercept point at output
G_ms
–
|S₂₁|²
–
NF_min
–
G_ass
–
OP_1dB
–
OIP3 –
25.5 –
24.5 –
0.95 –
22.5 –
7.5 –
23
–
Unit Note / Test Condition
dB
dB
dBm
I_C = 15 mA
I_C = 15 mA
I_C = 8 mA
I_C = 8 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 5-4 AC Characteristics, V_CE = 1.8 V, f = 900 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Power Gain
Maximum power gain
Transducer gain
G_ms
–
|S₂₁|²
–
25
–
24
–
Unit Note / Test Condition
dB
I_C = 15 mA
I_C = 15 mA
Data Sheet
12
Revision 1.0, 2014-08-05