BFR340F_10 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms = ƒ (I_C)
V_CE = 3V
f = parameter
24
dB
0.9GHz
20
18
1.8GHz
16
14
2.4GHz
12
3GHz
10
4GHz
8
6
4
0
2
4
6
8 10 mA 14
I_C
Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 100MHz
28
dBm
20
16
12
8
4
5V
3V
0
2.5V
2V
-4
1.5V
1V
-8
-12
-16
0
2
4
6
8 mA 11
IC
Noise figure F = ƒ(I_C)
V_CE = 1.5V, Z_S = Z_Sopt
Noise figure F = ƒ(I_C)
V_CE = 1.5V, f = 1.9GHz
BFR340F
7
2010-05-17