BFR340F_10 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Power gain G_ma, G_ms = ƒ(I_C)
f = 1.8GHz
V_CE = parameter
20
mA
16
14
12
10
5V
3V
2V
1V
0.75V
8
6
0
2
4
6
8 mA
12
I_C
Insertion Power Gain |S₂₁|² = ƒ(f)
V_CE = parameter
24
dB ^Ic=5mA
20
18
16
14
12
10
5V
3V
8
2V
1V
0.75V
6
4
0 0.5 1 1.5 2 2.5 3 GHz 4
f
BFR340F
Power Gain G_ma, G_ms = ƒ(f)
V_CE = parameter
45
Ic=5mA
dB
35
30
5V
3V
25
2V
1V
0.75V
20
15
10
5
0 0.5 1 1.5 2 2.5 3 GHz 4
f
Power Gain G_ma, G_ms = ƒ(V_CE): 
|S₂₁|² = ƒ(V_CE): - - - -
f = parameter
22
dB ^{Ic = 5mA}
0.9GHz
20
19
0.9GHz
18
17
1.8GHz
16
15
1.8GHz
14
13
12
11
10
0 1 2 3 4 5 6V 8
V_CE
6
2010-05-17