BFR340F_10 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

Total power dissipation P_tot = ƒ(T_S)
BFR340F
Collector-base capacitance C_cb= ƒ(V_CB)
f = 1MHz
80
0.4
V
pF
60
50
40
30
20
10
0
0 15 30 45 60 75 90 105 120 A 150
Third order Intercept Point IP₃=ƒ(I_C)
(Output, Z_S=Z_L=50Ω)
V_CE = parameter, f = 1.9GHz
28
dBm
20
16
12
8
4
0
5V
3V
-4
2.5V
2V
-8
1.5V
1V
-12
-16
0
2
4
6
8 mA 11
IC
0.3
0.25
0.2
0.15
0.1
0.05
0
0 2 4 6 8 10 12 V 16
V_CB
Transition frequency f_T= ƒ(I_C)
f = 1GHz
V_CE = parameter
16
GHz
5V
12
3V
10
2V
8
1V
6
0.75V
4
2
0
0
2
4
6
8 mA
12
I_C
5
2010-05-17