BFR340F_10 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

NPN Silicon RF Transistor
• General purpose Low Noise Amplifier
• Ideal for low current operation
• High breakdown voltage enables
operation in automotive applications
• Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz
• Small package 1,2 x 1,2 mm² with visible leads
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BFR340F
3
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR340F
Marking
Pin Configuration
FAs
1=B
2=E
3=C
Package
TSFP-3
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 110°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
6
15
15
2
20
2
75
150
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
≤ 530
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 Thermal Resistance}
Unit
V
mA
mW
°C
Unit
K/W
1
2010-05-17