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BFR340F_10 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor
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BFR340F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 4 V, VBE = 0, TA = 25°C
VCE = 10 V, VBE = 0, TA = 85°C
Verified by random sampling
V(BR)CEO 6
ICES
-
-
9
-V
nA
1
30
2
50
Collector-base cutoff current
VCB = 4 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 5 mA, VCE = 3 V, pulse measured
ICBO
IEBO
hFE
-
1
30
-
1 500
90 120 160 -
2
2010-05-17
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