BFR340F_10 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – NPN Silicon RF Transistor

BFR340F
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Maximum power gain¹⁾
G_max
I_C = 3 mA, V_CE = 1.5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 100 MHz
dB
-
28
-
I_C = 5 mA, V_CE = 3 V, Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 1.8 GHz
- 16.5 -
f = 3 GHz
-
13
-
Transducer gain
I_C = 3 mA, V_CE = 1.5 V, Z_S = Z_L = 50Ω ,
f = 100 MHz
I_C = 5 mA, V_CE = 3 V, Z_S = Z_L = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S _21e|²
dB
-
19
-
-
14
-
-
10
-
Third order intercept point at output²⁾
IP₃
V_CE = 3 V, I_C = 5 mA, f = 100 MHz,
Z_S = Z_L = 50Ω
V_CE = 3 V, I_C = 5 mA, f = 1.8 GHz,
Z_S = Z_L = 50Ω
1dB compression point at output
P_-1dB
V_CE = 3V, I_C = 5 mA, Z_S = Z_L = 50Ω, f = 100 MHz
V_CE = 3V, I_C = 5 mA, Z_S = Z_L = 50Ω, f = 1.8 GHz
dBm
-
14
-
-
13
-
-
-3
-
-
-1
-
1_{Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|}
2_{IP3 value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
4
2010-05-17