1EDI20N12AF_15 Datasheet, PDF (7/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC

1EDI EiceDRIVER™ Compact
Single Channel MOSFET and GaN HEMT Gate Driver IC
1EDI20N12AF
1
Overview
Main Features
• Single channel isolated Gate Driver
• Input to output isolation voltage up to 1200 V
• For high voltage power FETs
• 4 A typical peak current at rail-to-rail outputs
• Separate source and sink outputs
Product Highlights
• Galvanically isolated Coreless Transformer Driver
• Low input to output capacitive coupling
• Suitable for operation at high ambient temperature
• Wide input voltage operating range
• ideally suited for driving cascoded or normally-off Gallium Nitride
HEMTs
ED-
Compact
Typical Application
• AC and Brushless DC Motor Drives
• High Voltage PFC, DC/DC-Converter and DC/AC-Inverter
• Induction Heating Resonant Application
• UPS-Systems
• Welding
• Solar MPPT boost converter
Description
The 1EDI20N12AF is a galvanically isolated single channel FET driver in a PG-DSO-8-51 package that provides
output currents of at least 2 A at separated output pins.
The input logic pins operate on a wide input voltage range from 3 V to 15 V using CMOS threshold levels to
support even 3.3 V microcontroller.
Data transfer across the isolation barrier is realized by the Coreless Transformer Technology.
The undervoltage lockout (UVLO) functions for both input and output chip and an active shutdown feature are
included to always guarantee safe operation.
Product Name
1EDI20N12AF
Gate Drive Current (min)
±2.0 A MOSFET level optimized
Package
PG-DSO-8-51
Data Sheet
7
Rev. 2.0, 2015-06-01