1EDI20N12AF_15 Datasheet, PDF (12/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC

4
Functional Description
1EDI EiceDRIVER™ Compact
1EDI20N12AF
Functional Description
4.1
Introduction
The 1EDI EiceDRIVER™ Compact is a general purpose gate driver. Basic control and protection features support
fast and easy design of highly reliable systems.
The galvanic isolation between input logic and driver output is achieved by utilizing on-chip Coreless Transformer
Technology. The wide input range supports the direct connection of various signal sources like DSPs and
microcontrollers.
The separated rail-to-rail driver outputs simplify gate resistor selection, save an external high current bypass diode
and improve dV/dt control.
+5V
SGND
IN
VCC1
100 n
GND1
IN+
IN-
Figure 4 Application Example Bipolar Supply
VCC2
OUT+
OUT-
GND2
+12V
1µ
10R
3R3
0V
1µ _-8V
4.2
Supply
The driver can operate over a wide supply voltage range, either unipolar or bipolar.
With bipolar supply the driver is typically operated with a positive voltage of 12 V at VCC2 and a negative voltage
of -8V at GND2 relative to the source potential as seen in Figure 4. Negative supply can help to prevent a
dynamic turn on.
For unipolar supply configuration the driver is typically supplied with a positive voltage of 12 V at VCC2. In this
case, careful evaluation for turn off gate resistor selection is recommended to avoid dynamic turn on (see
Figure 5).
+5V
SGND
IN
VCC1
100 n
GND1
IN+
IN-
VCC2
OUT+
OUT-
GND2
+12V
1µ
10 R
3 R3
Figure 5 Application Example Unipolar Supply
Data Sheet
12
Rev. 2.0, 2015-06-01