|
1EDI20N12AF_15 Datasheet, PDF (16/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC | |||
|
◁ |
Table 4 Voltage Supply (contâd)
Parameter
Symbol
Min.
Quiescent current input IQ1
â
chip
Quiescent current output IQ2
â
chip
5.3.2 Logic Input
1EDI EiceDRIVER⢠Compact
1EDI20N12AF
Electrical Parameters
Values
Typ.
0.65
Max.
1.0
1.2
2.0
Unit
mA
mA
Note /
Test Condition
VVCC1 = 5 V
IN+ = High,
IN- = Low
=>OUT = High
VVCC2 = 15 V
IN+ = High,
IN- = Low
=>OUT = High
Note: Unless stated otherwise VCC1 = 5.0V
Table 5 Logic Input
Parameter
IN+,IN- low input voltage
IN+,IN- high input voltage
IN+,IN- low input voltage
IN+,IN- high input voltage
IN- input current
IN+ input current
5.3.3 Gate Driver
Symbol
VIN+L,VIN-L
VIN+H,VIN-H
VIN+L,VIN-L
VIN+H,VIN-H
IIN-
IIN+
Min.
â
70
â
3.5
â
â
Values
Typ.
â
â
â
â
70
70
Max.
30
â
1.5
â
200
200
Unit
%
%
V
V
μA
μA
Note /
Test Condition
of VCC1
of VCC1
â
â
VIN- = GND1
VIN+ = VCC1
Table 6 Gate Driver
Parameter
Symbol
High level output peak
current (source)
1EDI20N12AF
IOUT+,PEAK
Min.
2.0
Values
Typ.
Max.
â
4.0
Low level output peak IOUT-,PEAK
â
current (sink)
1EDI20N12AF
2.0
3.5
1) voltage across the device V(VCC2 - OUT+) or V(OUT- - GND2) < VVCC2.
Unit
A
A
Note /
Test Condition
1)
IN+ = High,
IN- = Low,
VVCC2 = 15 V
1)
IN+ = Low,
IN- = Low,
VVCC2 = 15 V
Data Sheet
16
Rev. 2.0, 2015-06-01
|
▷ |