1EDI20N12AF_15 Datasheet, PDF (15/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC

5.2
Operating Parameters
1EDI EiceDRIVER™ Compact
1EDI20N12AF
Electrical Parameters
Note: Within the operating range the IC operates as described in the functional description. Unless otherwise
noted all parameters refer to GND1.
Table 3 Operating Parameters
Parameter
Symbol
Values
Min.
Max.
Power supply output side
V_VCC2
10
35
Power supply input side
V_VCC1
3.1
17
Logic input voltages (IN+,IN-)
V_LogicIN
-0.3
17
Switching frequency
f_sw
–
4.0
Ambient temperature
T_A
-40
125
Thermal coefficient, junction-top
Ψ_th,jt
–
4.8
Common mode transient immunity |dV_ISO/dt| –
100
(CMTI)
1) With respect to GND2.
2) do not exceed max. power dissipation
3) Parameter is not subject to production test - verified by design/characterization
Unit
V
V
V
MHz
°C
K/W
kV/μs
Note /
Test Condition
1)
–
–
2) 3)
–
3) _{@TA = 85°C}
3) _{@ 1000 V}
5.3
Electrical Characteristics
Note: The electrical characteristics include the spread of values in supply voltages, load and junction temperatures
given below. Typical values represent the median values at T_A = 25°C. Unless otherwise noted all voltages
are given with respect to their respective GND (GND1 for pins 1 to 3, GND2 for pins 5 to 7).
5.3.1 Voltage Supply
Table 4 Voltage Supply
Parameter
Symbol
UVLO threshold input
chip
UVLO hysteresis input
chip (V_UVLOH1 - V_UVLOL1)
UVLO threshold output
chip (MOSFET Supply)
UVLO hysteresis output
chip (V_UVLOH2 - V_UVLOL2)
V_UVLOH1
V_UVLOL1
V_HYS1
V_UVLOH2
V_UVLOL2
V_HYS2
Min.
–
2.55
90
–
8.0
550
Values
Typ.
2.85
2.75
100
Max.
3.1
–
–
9.1
10.0
8.5
–
600
–
Unit Note /
Test Condition
V
–
V
–
mV
–
V
–
V
–
mV
–
Data Sheet
15
Rev. 2.0, 2015-06-01