1EDI20N12AF_15 Datasheet, PDF (17/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC

5.3.4 Short Circuit Clamping
1EDI EiceDRIVER™ Compact
1EDI20N12AF
Electrical Parameters
Table 7 Short Circuit Clamping
Parameter
Symbol
Min.
Clamping voltage (OUT+) V_CLPout
–
(V_OUT - V_VCC2)
Values
Unit
Typ.
Max.
0.9
1.3
V
5.3.5 Dynamic Characteristics
Dynamic characteristics are measured with V_VCC1 = 5 V and V_VCC2 = 15 V.
Table 8 Dynamic Characteristics
Parameter
Symbol
Min.
Input IN to output propa- T_PDON
90
gation delay ON
Input IN to output propa- T_PDOFF
100
gation delay OFF
Input IN to output propa- T_PDISTO -15
gation delay distortion
(T_PDOFF - T_PDON)
Input pulse suppression T_MININ+, 30
IN+, IN-
T_MININ-
IN input to output
T_PDONt
–
propagation delay ON
variation due to temp
IN input to output
T_PDOFFt
–
propagation delay OFF
variation due to temp
IN input to output
propagation delay
T_PDISTOt
–
distortion variation due to
temp (T_PDOFF-T_PDON)
Rise time
T_RISE
5
Values
Unit
Typ.
Max.
115
137
ns
120
143
ns
5
25
ns
40
–
ns
–
10
ns
–
10
ns
–
4
ns
10
20
ns
Fall time
T_FALL
4
9
19
ns
1) The parameter is not subject to production test - verified by design/characterization
Note /
Test Condition
IN+ = High,
IN- = Low,
OUT = High
I_OUT = 500 mA
pulse test,
t_CLPmax = 10 μs)
Note /
Test Condition
C_LOAD = 100 pF
V_IN+ = 50%,
V_OUT=50% @ 25°C
–
1)_{CLOAD = 100 pF}
V_IN+ = 50%,
V_OUT=50%
1)_{CLOAD = 100 pF}
V_IN+ = 50%,
V_OUT=50%
1)_{CLOAD = 100 pF}
V_IN+ = 50%,
V_OUT=50%
C_LOAD = 1 nF
V_L 20%, V_H 80%
C_LOAD = 1 nF
V_L 20%, V_H 80%
Data Sheet
17
Rev. 2.0, 2015-06-01