1EDI20N12AF_15 Datasheet, PDF (14/22 Pages) Infineon Technologies AG – Single Channel MOSFET and GaN HEMT Gate Driver IC

5
Electrical Parameters
1EDI EiceDRIVER™ Compact
1EDI20N12AF
Electrical Parameters
5.1
Absolute Maximum Ratings
Note: Absolute maximum ratings are defined as absolute limits, i.e. exceeding them may lead to destruction of the
integrated circuit.
Table 2 Absolute Maximum Ratings
Parameter
Symbol
Values
Min.
Max.
Unit Note /
Test Condition
Power supply output side
V_VCC2
-0.3
40
V
1)
Gate driver output
V_OUT
V_GND2-0.3 V_VCC2+0.3 V
–
Positive power supply input side
V_VCC1
-0.3
18.0
V
–
Logic input voltages (IN+,IN-)
V_LogicIN
-0.3
18.0
V
–
Input to output isolation voltage
V_ISO
-1200
1200
V
Junction temperature
T_J
-40
150
°C
–
Storage temperature
Power dissipation (Input side)
Power dissipation (Output side)
Thermal resistance (Input side)
Thermal resistance (Output side)
T_S
-55
P_{D, IN}
–
P_{D, OUT}
–
R_THJA,IN
–
R_THJA,OUT –
150
°C
–
25
mW
2) _{@TA = 25°C}
400
mW
2) _{@TA = 25°C}
145
K/W
2) _{@TA = 85°C}
165
K/W
2) _{@TA = 85°C}
ESD capability
V_ESD,HBM –
2
kV
Human Body
Model³⁾
1) With respect to GND2.
2) See Figure 10 for reference layouts for these thermal data. Thermal performance may change significantly with layout and
heat dissipation of components in close proximity.
3) According to EIA/JESD22-A114-C (discharging a 100 pF capacitor through a 1.5 kΩ series resistor).
Data Sheet
14
Rev. 2.0, 2015-06-01