PXFC193808SV Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

PXFC193808SV
Broadband Circuit Impedance
Z Source
G1
G2
D1 ^{Z Load}
S
D2
Frequency
[MHz]
1805.0
1842.5
1880.0
Z Source
[Ω]
0.59 –j5.21
0.55 –j5.14
0.55 –j5.07
Z Load
[Ω]
1.87 –j2.27
1.92 –j2.38
1.94 –j2.54
Load Pull Performance
Z Source
D
Z Load
G
S
Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA
Class AB
Freq
Zin
[MHz]
[Ω]
1805.0 0.90 – j6.31
1842.5 1.26 – j7.08
1880.0 1.86 – j8.27
Zo
[Ω]
5.32 – j5.58
5.67 – j5.06
6.17 – j4.71
Max Output Power
Gain
[dB]
P_OUT
[dBm]
P_OUT
[W]
17.6 54.64 291
17.5 54.57 286
18.0 54.52 283
P_3dB
PAE
Zo
[%]
[Ω]
55.8 3.61 – j3.45
55.8 3.60 – j3.43
54.8 3.52 – j3.70
Max Efficiency
Gain P_OUT P_OUT
[dB] [dBm] [W]
19.3 53.81 240
19.2 53.77 238
19.6 53.73 236
Efficiency
[%]
64.0
63.7
63.2
Single side pulsed CW signal: 10 µsec, 10% duty cycle; 28 V, 1440 mA
Class AB
Freq
Zin
[MHz]
[Ω]
1805.0 0.90 – j6.31
1842.5 1.26 – j7.08
1880.0 1.86 – j8.27
Zo
[Ω]
4.22 – j5.43
4.30 – j5.28
5.04 – j5.46
Max Output Power
Gain
[dB]
P_OUT
[dBm]
P_OUT
[W]
19.8 53.90 245
19.7 53.86 243
20.0 53.83 241
P_1dB
PAE
Zo
[%]
[Ω]
54.4 2.89 – j2.95
55.0 2.80 – j3.08
53.0 2.79 – j3.85
Max Efficiency
Gain P_OUT P_OUT
[dB] [dBm] [W]
21.9 52.44 175
21.8 52.36 172
21.8 52.67 185
Efficiency
[%]
63.1
62.8
62.1
Data Sheet
6 of 10
Rev. 02.1, 2015-01-13