PXFC193808SV Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

PXFC193808SV
Typical Performance (cont.)
Pulsed CW Performance
at selected V_DD
I_DQ = 2850 mA, ƒ = 1880 MHz
24
70
22
60
Gain
20
50
V_DD = 24 V
18
V_DD = 28 V
40
V_DD = 32 V
16
30
14
20
Efficiency
12
10
10
c193808sv-gr5c
0
33 37 41 45 49 53 57 61
Output Power (dBm)
CW Performance Small Signal
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 3500 mA
24
0
22
-5
20
-10
Gain
18
-15
16
-20
14
-25
12
Return Loss
-30
10
c193808sv-gr6
-35
1650 1700 1750 1800 1850 1900 1950 2000
Frequency (MHz)
See next page for circuit impedance and device load pull performance
Data Sheet
5 of 10
Rev. 02.1, 2015-01-13