PXFC193808SV Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

PXFC193808SV
DC Characteristics (each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 2.88 A
Symbol
V(_BR)DSS
I_DSS
I_DSS
I_GSS
R_DS(on)
V_GS
Min
65
—
—
—
—
2.3
Typ
—
—
—
—
0.19
2.6
Max
—
1
10
1
—
2.9
Unit
V
µA
µA
µA
Ω
V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 280 W CW)
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_θJC
Value
65
–6 to +10
0 to +32
225
–65 to +150
0.18
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package and Description
Shipping
PXFC193808SV V1 R250 PXFC193808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, push-pull, earless Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 02.1, 2015-01-13