PXFC193808SV Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

Typical Performance (cont.)
Single-carrier WCDMA Broadband
V_DD = 28 V, I_DQ = 2850 mA, P_OUT = 49 dBm,
3GPP WCDMA signal, 10 dB PAR
-10
0
-15
-5
-20
ACP Up
-25
ACP Low
-30
-10
Return Loss
-15
-20
-35
-25
-40
1700
1800
1900
Frequency (MHz)
c193808sv-gr3b
-30
2000
PXFC193808SV
Pulsed CW Performance
V_DD = 28 V, I_DQ = 2850 mA
24
22
20
18
16
14
12
10
37
Gain
1805.0 MHz
1842.5 MHz
1880.0 MHz
Efficiency
42
47
52
Output Power (dBm)
70
60
50
40
30
20
10
c193808sv-gr4
0
57
Pulsed CW Performance
at selected V_DD
I_DQ = 2850 mA, ƒ = 1805 MHz
24
70
22
60
Gain
20
50
18 V_DD = 24 V
V_DD = 28 V
16 _{VDD = 32 V}
14
40
30
Efficiency
20
12
10
10
c193808sv-gr5a
0
33 37 41 45 49 53 57 61
Output Power (dBm)
Pulsed CW Performance
at selected V_DD
I_DQ = 2850 mA, ƒ = 1842.5 MHz
24
70
22
60
Gain
20
50
18
V_DD = 24 V
V_DD = 28 V
40
16 ^{VDD = 32 V}
30
14
20
Efficiency
12
10
10
c193808sv-gr5b
0
33 37 41 45 49 53 57 61
Output Power (dBm)
Data Sheet
4 of 10
Rev. 02.1, 2015-01-13