PXFC193808SV Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

PXFC193808SV
Thermally-Enhanced High Power RF LDMOS FET
380 W, 28 V, 1805 – 1880 MHz
Description
The PXFC193808SV is a 380-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 1805 to 1880
MHz frequency band. Features include input and output matching,
high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PXFC193808SV
Package H-37275G-6/2
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2850 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
20 _Gain
16
12
40
20
Efficiency
0
8
-20
4
PAR @ 0.01% CCDF
-40
0
c193808sv-gr1c
-60
25 30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Typical pulsed CW performance, 1842.5 MHz, 28 V,
- Output power at P_1dB = 380 W
- Efficiency = 54.9%
- Gain = 21 dB
• Integrated ESD protection
• ESD: Human Body Model, Class 2 (per ANSI/
ESDA/JEDEC JS-001)
• Capable of handling 10:1 VSWR @28 V, 200 W
(1-C WCDMA) output power
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
V_DD = 28 V, I_DQ = 2880 mA, P_OUT = 80 W avg, ƒ = 1880 MHz.
3GPP signal, 3.84 MHz channel bandwidth, 10 dB peak/average @ 0.01% probability on CCDF.
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
η_D
ACPR
19.5
21
28.5 30.3
—
–33.5
Max
—
—
–32
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2015-01-13