PXFC193808SV Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 – 1880 MHz

PXFC193808SV
Typical Performance (data taken in an Infineon production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2850 mA, ƒ = 1805 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
Gain
20
40
16
Efficiency
20
12
0
8
-20
4
PAR @ 0.01% CCDF
-40
0
25
c193808sv-gr1a
-60
30 35 40 45 50 55
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2850 mA, ƒ = 1842.5 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
24
60
20 _Gain
40
16
20
Efficiency
12
0
8
-20
4
PAR @ 0.01% CCDF
-40
0
25
c193808sv-gr1b
-60
30 35 40 45 50 55
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 2850 mA,
ƒ = 1805.0, 1842.5, 1880.0 MHz,
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz BW
-10
60
1805.0 MHz
-20
1842.5 MHz
50
1880.0 MHz
-30
40
ACP Up & Low
-40
30
-50
20
Efficiency
-60
10
-70
27
c193808sv-gr2
0
32 37 42 47 52 57
Average Output Power (dBm)
Single-carrier WCDMA Broadband
V_DD = 28 V, I_DQ = 2850 mA, P_OUT = 49 dBm,
3GPP WCDMA signal, 10 dB PAR
25
50
Gain
20
40
15
30
Efficiency
10
20
5
1700
1800
1900
Frequency (MHz)
c193808sv-gr3a
10
2000
Data Sheet
3 of 10
Rev. 02.1, 2015-01-13