PTFC262808SV Datasheet, PDF(6/8 Page) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620

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PTFC262808SV Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz

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PTFC262808SV

Reference Circuit (cont.)

Component Information (cont.)

Component

Description

Input (cont.)

R103, R104

Resistor, 10 Î©

R107, R109

Resistor, 0.0 Î©

R108

Resistor, 0.0 Î©

R801

Resistor, 1 Î©

R802

Resistor, 1k Î©

R803

Resistor, 1.3k Î©

R804

Resistor, 1.2k Î©

Potentiometer, 2k Î©

Transistor

Voltage regulator

Output

C201, C204

Chip capacitor, 0.2 pF

C202, C206, C207, C208, Capacitor, 10 ÂµF

C209, C210

C203, C212

Chip capacitor, 18 pF

C205, C211

Capacitor, 220 ÂµF, 35 V

Pinout Diagram

Suggested Manufacturer P/N

Panasonic Electronic Components

Bourns Inc.

Inï¬neon Technologies

Fairchild Semiconductor

ERJ-8GEYJ100V

ERJ-8GEY0R00V

ERJ-3GEY0R00V

ERJ-8GEYJ1R0V

ERJ-8GEYJ102V

ERJ-3GEYJ132V

ERJ-3GEYJ122V

3224W-1-202E

BCP56-10

LM7805

ATC

Taiyo Yuden

ATC100B0R2BW150X

UMK325C7106MM-T

ATC

Panasonic Electronic Components

ATC800A180JW250X

EEE-FP1V221AP

H-34275G-6-2_gw_pd_10-10-2012

V1, V2

G1, G2

D1, D2

Description

VDD

Gate

Drain

Source (ï¬ange)

Data Sheet

6 of 8

Rev. 02.1, 2013-08-02

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