PTFC262808SV Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz

PTFC262808SV
Typical Performance (data taken in a reference design fixture)
Pulsed CW Performance
(gain and input return loss)
V_DD = 28 V, I_DQ = 650 mA
19
0
-5
18
IRL _-10
-15
17
-20
-25
16
-30
Gain
-35
15
c262808sv-gr7
-40
2300 2400 2500 2600 2700 2800 2900 3000
Frequency (MHz)
Pulsed CW Performance
V_DD = 28 V, I_DQ = 1.8 A
20
60
19
50
18 _Gain
40
17
30
16
Efficiency
15
44 46 48
2620 MHz
2655 MHz
2690 MHz
50 52 54
20
c262808s v-gr5
10
56
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1800 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
2620 MHz
-25
2655 MHz
2690 MHz
-30
-35
-40
IMD Up
IMD Low
-45
c262808sv-gr3
38 40 42 44 46 48 50 52
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
40
IM3L
-25
IM3U
35
ACPR
-30
Eff
30
-35
25
-40
20
-45
15
-50
38
40 42 44 46 48
Output Power (dBm)
50
c262808sv-gr2
10
52
Data Sheet
3 of 8
Rev. 02.1, 2013-08-02