PTFC262808SV Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz

Typical Performance (cont.)
Pulsed CW Performance
at selected supply voltages
I_DQ = 1800 mA, ƒ = 2690 MHz
V_DD = 32 V
20
V_DD = 28 V
60
V_DD = 24 V
19
50
18 _Gain
40
17
30
16
20
Efficiency
15
c 262808sv-gr6
10
42 44 46 48 50 52 54 56
Output Power (dBm)
Broadband Circuit Impedance
Frequency
MHz
2620
2655
2690
Z Source 
R
jX
2.07
–2.45
1.98
–2.39
1.91
–2.33
Z Load 
R
jX
0.69
–4.22
0.68
–4.19
0.66
–4.08
PTFC262808SV
Z Source
G
G
D ^{Z Load}
S
D
Data Sheet
4 of 8
Rev. 02.1, 2013-08-02