PTFC262808SV Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz

PTFC262808SV
DC Characteristics (single side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.45 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.05
2.65
—
Max
—
1.0
10.0
—
—
1
Unit
V
µA
µA
Ω
V
µA
Symbol
V_DSS
V_GS
V_DD
T_J
T_STG
R_θJC
Value
65
–6 to +10
0 to +32
200
–65 to +150
0.20
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version Order Code
Package and Description
PTFC 262808SV V1 R250 PTFC262808SVV1R250XTMA1 H-37275G-6/2, ceramic open-cavity, formed leads,
earless
Shipping
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.1, 2013-08-02