PTFC262808SV Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz

PTFC262808SV
Thermally-Enhanced High Power RF LDMOS FET
280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808SV is a 280-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package. Manufactured with
Infineon's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFC262808SV
Package H-37275G-6/2
with formed leads
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1800 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
19
40
18
Gain
35
17
30
16
25
Efficiency
15
20
14
15
13
c262808sv-gr1
10
38 40 42 44 46 48 50 52
Output Power (dBm)
Features
• Broadband internal matching
• Typical CW pulsed performance, 2620 MHz, 28 V
- Output power at P_1dB = 280 W
- Efficiency = 52%
- Gain = 18 dB
• Typical 1-carrier WCDMA performance, 2655 MHz,
28 V
- Output power at P_1dB = 56 W avg.
- Efficiency = 24%
- Gain = 18.0 dB
• Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
• Low thermal resistance
• RoHS-compliant
• Capable of handling 10:1 VSWR at 28 V, 280 W
(CW) ouput power
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
V_DD = 28 V, I_DQ = 1800 mA, P_OUT = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
16.5 18.0
—
dB
η_D
22
24
—
%
ACPR
—
–33
–30
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2013-08-02