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| PTFC262808SV Datasheet, PDF (5/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 – 2690 MHz | |||
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PTFC262808SV
Reference Circuit, tuned for 2620 â 2690 MHz
DUT
PTFC262808SV
Test Fixture Part No.
PCB
LTN/PTFC262808SV V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber ï¬les for this test ï¬xture on the Inï¬neon Web site at (http://www.inï¬neon.com/rfpower)
R802 C801 C803
R801
RO4350, .020
R803 (60)
S1
R107
S3
R108
R109
C103
R103
C102
C802
S2
R804
R102
RF_IN
C105
C106
C101
C107
C104
C108
R104
R101
RO4350, .020 (60)
C202 C206
C205
C207
VDD
C212
C203
C201
C204
RF_OUT
C209
+
C211
C210 C208
VDD
PTFC262808SV_IN_1A
Reference circuit assembly diagram (not to scale)
Component Information
Component
Description
Input
C101, C102, C107, C108
C103, C104
C105
C106
C801, C802, C803
R101, R102
Chip capacitor, 18 pF
Capacitor, 10 µF
Chip capacitor, 0.4 pF
Chip capacitor, 0.7 pF
Chip capacitor, 1,000 pF
Resistor, 10 Ω
Data Sheet
PTFC262808SV_OUT_01
c 28 2 8 08 s v _c d_ 6 - 28 - 13
Suggested Manufacturer P/N
ATC
Murata Electronics North America
ATC
ATC
Panasonic Electronic Components
Panasonic Electronic Components
5 of 8
ATC800A180JW250X
LLL31BC70G106MA01L
ATC100B0R4CW150X
ATC100B0R7CW150X
ECJ-1VB1H102K
ERJ-3GEYJ100V
(table cont. next page)
Rev. 02.1, 2013-08-02
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