PTFB213004F_16 Datasheet, PDF (6/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

PTFB213004F
Typical Performance (cont.)
Output PAR Compression (PARC),
2110 MHz
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2110 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
20
60
Single-carrier Broadband Performance
V_DD = 30 V, I_DQ = 2.4 A, P_OUT = 89 W,
single-carrier 3GPP WCDMA signal
40
0
Gain
40
35 ^Efficiency
-5
15
30
20
-10
Efficiency
0
25
IRL
-15
10
PARC @ .01% CCDF
20 Gain
-20
db213004^-20f-v1_2sgr₁₅ Jan. 29, 2010 2:30:00 PM_-25
5
-40
10
PARC
ACP
-30
0
ACP _{ptfb2--860013004f05-v1}
-35
-40
36
40
44
48
52
56
2060
2100
2140
2180
2220
Output Power, avg. (^NdBm^o)^{rnalized to 50 Ohms}
Frequency (MHz)
Graph #2
Broadband Circuit Impedance
Frequency
MHz
2080
2090
2100
2110
2120
2130
2140
2150
2160
2170
2180
2190
2200
Z Source W
R
jX
1.55
–4.57
1.54
–4.52
1.52
–4.48
1.51
–4.44
1.50
–4.40
1.48
–4.36
1.47
–4.32
1.46
–4.28
1.45
–4.24
1.43
–4.20
1.42
–4.17
1.41
–4.13
1.40
–4.09
Z Load W
R
jX
0.71
–2.91
0.71
–2.89
0.70
–2.86
0.70
–2.84
0.70
–2.81
0.70
–2.79
0.70
–2.77
0.70
–2.74
0.69
–2.72
0.69
–2.70
0.69
–2.67
0.69
–2.65
0.69
–2.63
Z Source
G
G
D ^{Z Load}
S
D
Z₀ = 50 Ω
Z Load
2080 MHz
2200 MHz
2200 MHz
2080 MHz
Z Source
0.1
Data Sheet
6 of 16
Rev. 05.3, 2016-06-15
0. ²