PTFB213004F_16 Datasheet, PDF (3/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

PTFB213004F
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.4 A, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, 3.84 MHz BW
-30
2170 MHz
2140 MHz
2110 MHz
-40
IM3 Up
-50
-60
35
IM3 Low
39
43
47
51
Output Power, Avg. (dBm)
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.85 MHz BW
19
40
18
Gain
30
17
20
16
15
35
Efficiency
39
43
47
Output Power (dBm)
10
0
51
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2170 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz BW
-25
45
IMD Low
-35
35
IMD Up
-45
25
-55
-65
36
ACPR
Efficiency
40
44
48
Output Power, avg. (dBm)
15
5
52
Two-tone Broadband Performance
V_DD = 30 V, I_DQ = 2.4 A, P_OUT = 126 W
60
0
50
40 ^Efficiency
Return Loss
-10
-20
30
20
Gain
-30
IMD 3
-40
10
2060
2100
2140
2180
Frequency (MHz)
-50
2220
Data Sheet
3 of 16
Rev. 05.3, 2016-06-15