PTFB213004F_16 Datasheet, PDF (14/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

PTFB213004F
Pinout Diagram
V1
V2
D
D1
D2
Pin Description
G1, G2 Gate
G
D1, D2 Drain
S = flange
V1, V2 V_DD
S
Source (flange)
D
G1
G2
G
h- 36/ 37275 -8_ B D-s_ 2-3- 2010
See next page for package outline specifications
Data Sheet
14 of 16
Rev. 05.3, 2016-06-15