PTFB213004F_16 Datasheet, PDF (5/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz

Typical Performance (cont.)
Two-tone IMD vs. Output Power
V_DD = 30 V, I_DQ = 2.4 A,
ƒ₁ = 2170 MHz, ƒ₂ = 2169 MHz
-15
-25
-35
-45
-55
-65
-75
39
3rd Order
5th
7th
43
47
51
55
Output Power, Avg. (dBm)
PTFB213004F
Intermodulation Distortion vs.
Tone Spacing
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2140 MHz,
P_OUT = 251 W (PEP)
-15
-25
IM3
-35
IM5
-45
IM7
-55
-65
0
10 20 30 40 50 60 70 80
Tone Spacing (MHz)
Output PAR Compression (PARC),
2170 MHz
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2170 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
20
60
Gain
40
15
20
Efficiency
0
10
PARC @ .01% CCDF
-20
5
0
36
ACP
40
44
48
52
Output Power, avg. (dBm)
-40
-60
-80
56
Output PAR Compression (PARC),
2140 MHz
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2140 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
20
60
Gain
40
15
20
Efficiency
0
10 _{PARC @ .01% CCDF}
-20
5
0
36
ACP
40
44
48
52
Output Power, avg. (dBm)
-40
-60
-80
56
Data Sheet
5 of 16
Rev. 05.3, 2016-06-15